Full configuration interaction approach to the few-electron problem in artificial atoms
نویسندگان
چکیده
منابع مشابه
0 Properties of few - electron artificial atoms
The spectra of quantum dots of different geometry (" quantum ring " , " quantum cylinder " , " spherical square-well " and " parabolic ") are studied. The stochastic variational method on correlated Gaussian basis functions and a large scale shell-model approach have been used to investigate these " artificial " atoms and their properties in magnetic field. Accurate numerical results are presen...
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15 صفحه اولThe single electron transistor and artificial atoms
Modern techniques of lithography make it possible to confine electrons to sufficiently small dimensions that the quantization of both their charge and their energy are easily observable. When such confined electrons are allowed to tunnel to metallic leads a single electron transistor (SET) is created. This transistor turns on and off again every time one electron is added to the isolated region...
متن کاملRank-Restricted Full Configuration Interaction
which is a linear combination of n-electron configurations, or determinants, with coefficients equal to c!. The components |Φ! form an orthonormal basis of the wavefunction. The determinants are the set of features that comprise the wavefunction, so we can optimize them by minimizing the electronic energy. To determine the energy of the wavefunction c, the Schrödinger equation in matrix form reads
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ژورنال
عنوان ژورنال: The Journal of Chemical Physics
سال: 2006
ISSN: 0021-9606,1089-7690
DOI: 10.1063/1.2179418